Paper Title:
The Texture Effect on Diffusion Barrier Property on TiN Films between Copper and Si Wafer
  Abstract

TiN thin films are widely used as a coating material due to their good mechanical and conductivity properties, high thermal properties, strong erosion and corrosion resistance. Also TiN has been used in Si devices as a diffusion barrier material for Al and Cu-based metallization. The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layer. In this study, the relationship between the texture and microstructure and the best diffusion barrier propertiy of TiN coated films (by PVD and MOCVD) on semiconductor devices (Cu/TiN/SiO2/Si layer) were investigated under different processing conditions and textures. The property of diffusion barrier for Cu of physical vapor deposited TiN thin films is better than that of metal organic chemical vapor deposited TiN thin films. Also the property of diffusion barrier for Cu of (111) textured TiN thin films is better than that of (200) textured TiN thin films.

  Info
Periodical
Materials Science Forum (Volumes 495-497)
Edited by
Paul Van Houtte and Leo Kestens
Pages
1371-1376
DOI
10.4028/www.scientific.net/MSF.495-497.1371
Citation
D. Y. Sung, I. S. Kim, M. G. Lee, N. J. Park, B. L. Yang, J. M. Yang, J. K. Ko, "The Texture Effect on Diffusion Barrier Property on TiN Films between Copper and Si Wafer ", Materials Science Forum, Vols. 495-497, pp. 1371-1376, 2005
Online since
September 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Yang Wang, Zhi Jian Peng, Qi Wang, Xiu Li Fu
Chapter 5: Emerging Inorganic Non-Metallic Materials
Abstract:ZnO1-x thin films were deposited by RF magnetron sputtering on conducting silicon wafers at room temperature with ZnOn...
723
Authors: Guo Qi Sun, Sun Yong, Yong Hua Duan
Chapter 6: Special Coatings
Abstract:W-Ti thin films with different Ti contents were prepared by dc magnetron sputtering on silicon substrates of p-type (100) orientation, and...
654