First-Principles Calculations of Metal/Oxide Interfaces: Effects of Interface Stoichiometry |
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| Journal | Materials Science Forum (Volume 502) |
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| Volume | New Frontiers of Processing and Engineering in Advanced Materials |
| Edited by | Masaaki Naka and Toshimi Yamane |
| Pages | 27-32 |
| DOI | 10.4028/www.scientific.net/MSF.502.27 |
| Citation | Masanori Kohyama et al., 2005, Materials Science Forum, 502, 27 |
| Online since | December, 2005 |
| Authors | Masanori Kohyama, Shingo Tanaka, Kazuyuki Okazaki, Rui Yang, Yoshitada Morikawa |
| Keywords | Density Functional Theory (DFT), Gold Catalyst, Interfacial Electronic Structure, Tensile Strength |
| Abstract | Ab initio pseudopotential calculations of Cu/Al2O3 and Au/TiO2 interfaces have revealed strong effects of interface stoichiometry. About the Cu/Al2O3 system used for coatings and electronic devices, the interfacial bond of the O-terminated (O-rich) Cu/Al2O3(0001) interface is very strong with ionic and covalent Cu-O interactions, although that of the Al-terminated (stoichiometric) one is rather weak with electrostatic and Cu-Al hybridization interactions. About the Au/TiO2 system with unique catalytic activity, the adhesive energy between non-stoichiometric (Ti-rich or O-rich) TiO2(110) surface and a Au layer is very large, and there occur substantial charge transfer and orbital hybridization, which should have close relations to the catalytic activity. |
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