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First-Principles Calculations of Metal/Oxide Interfaces: Effects of Interface Stoichiometry

Journal Materials Science Forum (Volume 502)
Volume New Frontiers of Processing and Engineering in Advanced Materials
Edited by Masaaki Naka and Toshimi Yamane
Pages 27-32
DOI 10.4028/www.scientific.net/MSF.502.27
Citation Masanori Kohyama et al., 2005, Materials Science Forum, 502, 27
Online since December, 2005
Authors Masanori Kohyama, Shingo Tanaka, Kazuyuki Okazaki, Rui Yang, Yoshitada Morikawa
Keywords Density Functional Theory (DFT), Gold Catalyst, Interfacial Electronic Structure, Tensile Strength
Abstract

Ab initio pseudopotential calculations of Cu/Al2O3 and Au/TiO2 interfaces have revealed strong effects of interface stoichiometry. About the Cu/Al2O3 system used for coatings and electronic devices, the interfacial bond of the O-terminated (O-rich) Cu/Al2O3(0001) interface is very strong with ionic and covalent Cu-O interactions, although that of the Al-terminated (stoichiometric) one is rather weak with electrostatic and Cu-Al hybridization interactions. About the Au/TiO2 system with unique catalytic activity, the adhesive energy between non-stoichiometric (Ti-rich or O-rich) TiO2(110) surface and a Au layer is very large, and there occur substantial charge transfer and orbital hybridization, which should have close relations to the catalytic activity.

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