Paper Title:
A Monte Carlo Model for Analyzing the Effects on Radiometric Temperature Measurement in Rapid Thermal Processor
  Abstract

The radiometric temperature measurement is often applied to the in-situ and real-time monitor for rapid thermal processing of semiconductor wafer. To obtain good accuracy, the effective emissivity of measured spot is determined simultaneously as well. However, the effective emissivity strongly depends on the characteristics of wafer, processing chamber, and sensors. This paper presents a Monte Carlo model with bi-directional reflection distribution function to estimate the related effective emissivity of wafer. The ends of radiation thermometer considered are located either on the inner surface of processing chamber or at the proximity of wafer. The results are checked and compared with those of the previous work. Finally the primary effects on radiometric temperature measurement are analyzed and discussed.

  Info
Periodical
Materials Science Forum (Volumes 505-507)
Edited by
Wunyuh Jywe, Chieh-Li Chen, Kuang-Chao Fan, R.F. Fung, S.G. Hanson,Wen-Hsiang Hsieh, Chaug-Liang Hsu, You-Min Huang, Yunn-Lin Hwang, Gerd Jäger, Y.R. Jeng, Wenlung Li, Yunn-Shiuan Liao, Chien-Chang Lin, Zong-Ching Lin, Cheng-Kuo Sung and Ching-Huan Tzeng
Pages
325-330
DOI
10.4028/www.scientific.net/MSF.505-507.325
Citation
J. C. Tsao, C. C. Su, "A Monte Carlo Model for Analyzing the Effects on Radiometric Temperature Measurement in Rapid Thermal Processor", Materials Science Forum, Vols. 505-507, pp. 325-330, 2006
Online since
January 2006
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