Paper Title:
Enhancement of the Characteristics of the ALD HfO2 Film by Using the High-Pressure D2 Annealing
  Abstract

We investigated the characteristics of the HfO2 layer deposited by ALD method in MOSFET devices where the HfO2 film is incorporated as the gate dielectric layer. The HfO2 film was annealed with forming gas (FG) or high-pressure D2 gas to investigate the effect of annealing on the characteristics of the MOSFET device. It was found that the drain current and transconductance of the D2-annealed MOSFET device increased remarkably by ~10% compared with those of FG-annealed MOSFET device, which is a definite improvement that may contribute to reliable operation of the ultra high-density MOSFET devices.

  Info
Periodical
Materials Science Forum (Volumes 510-511)
Edited by
Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee
Pages
190-193
DOI
10.4028/www.scientific.net/MSF.510-511.190
Citation
K.H. Baik, S. J. Ahn, C. G. Park, S. Y. Lee, S. J. Ahn, "Enhancement of the Characteristics of the ALD HfO2 Film by Using the High-Pressure D2 Annealing", Materials Science Forum, Vols. 510-511, pp. 190-193, 2006
Online since
March 2006
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