Paper Title:
Cell Sensing Margin of Lead-Free (Bi,La)4Ti3O12Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device
  Abstract

A 16Mb 1-transistor /1-capacitor (1T1C) FeRAM device was fabricated with lead-free Bi3.25La0.75Ti3.0O12 (BLT) capacitors. The key integration processes contain a scalable MTP (Merged Top-electrode and Plate-line) cell structure and reliable BLT ferroelectric capacitors. Ferroelectric properties of BLT films were optimized on the newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12. The switchable polarization obtained in a 100nm-thick BLT film was about 20 µC/cm2 at the 3 V applied voltage, and the optimized BLT film showed a few fatigue losses about 10% up to 1 × 1011 cycles. The imprint properties of the BLT film were also characterized at 25°C and 90°C operating temperature after 125°C data storage. The average cell signal sensing margin between data "1" and data "0" was measured to be about 900 mV, which is a sufficiently large margin for device operation.

  Info
Periodical
Materials Science Forum (Volumes 510-511)
Edited by
Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee
Pages
530-533
DOI
10.4028/www.scientific.net/MSF.510-511.530
Citation
J.H. Choi, H.S. Yoo, K.W. Cho, N.K. Kim, S.H. Oh, E.S. Choi, S.J. Yeom, H.J. Sun, S.S. Lee, K.N. Lee, S. K. Hong, T. W. Hong, I. H. Kim, S. L. Ryu, S. Y. Kweon, "Cell Sensing Margin of Lead-Free (Bi,La)4Ti3O12Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device", Materials Science Forum, Vols. 510-511, pp. 530-533, 2006
Online since
March 2006
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