Paper Title:
Reliability of Sn-Ag-Cu Flip Chip Package with Underfill under Thermal Shock
  Abstract

Thermal fatigue properties of solder joints encapsulated with underfill were studied conducting thermal shock tests. Flip chip package with electroless nickel-immersion gold plated on FR-4 substrate and the Sn-3.0Ag-0.5Cu solder ball was used. The fatigue property of package with underfill was better than the package without it. The fatigue property of package with underfill which has a higher glass transition temperature (Tg) and lower coefficient of thermal expansion (CTE) was better than that of package with underfill with lower Tg and higher CTE.

  Info
Periodical
Materials Science Forum (Volumes 510-511)
Edited by
Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee
Pages
558-561
DOI
10.4028/www.scientific.net/MSF.510-511.558
Citation
B. I. Noh, S. B. Jung, "Reliability of Sn-Ag-Cu Flip Chip Package with Underfill under Thermal Shock", Materials Science Forum, Vols. 510-511, pp. 558-561, 2006
Online since
March 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Boo Yang Jung, Eun Kyoung Choi, Young Soo Jeon, Kwang Yong Lee, Kwang Seok Seo, Tae Sung Oh
Abstract:For flip-chip process of RF system-on-packages(SOP), double bump bonding processes were investigated. Sn-Ag and Sn solder joints were formed...
25
Authors: Meng Kao Yeh, Chun Lin Lu
Abstract:The thermal expansion mismatch problem for a chip due to temperature decrease from processing temperature to room temperature may cause...
563
Authors: Meng Kao Yeh, Chun Lin Lu
Abstract:The thermal stress and thermal fatigue life for three different microgyroscope chip models were investigated in this paper. The deformation...
622
Authors: Li Gong Sun, Chao Meng, Qing Duan Meng
Abstract:Based on viscoplastic Anand’s model, the structural stress of 8×8 InSb array detector with underfill dependent on indium bump sizes is...
2289
Authors: Qian Yu, Li Wen Zhang, Qing Duan Meng
Chapter 8: System Modeling and Simulation
Abstract:To reduce the fracture probability of InSb infrared detector in thermal shock from room temperature to 77K, for 16×16 mesa structure InSb...
4320