Paper Title:
Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition
  Abstract

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

  Info
Periodical
Materials Science Forum (Volumes 510-511)
Edited by
Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee
Pages
670-673
DOI
10.4028/www.scientific.net/MSF.510-511.670
Citation
C. M. Lee, Y. K. Park, A. Park, C. M. Kim, "Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition", Materials Science Forum, Vols. 510-511, pp. 670-673, 2006
Online since
March 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Chong Mu Lee, Young Joon Cho, Ho Jin Kim, Wang Woo Lee, Hyoun Woo Kim, Chang Kwon Hwangbo, Jae Gab Lee
Abstract:Influence of nitrogen and oxygen annealing atmospheres on the carrier concentration, carrier mobility, electrical resistivity and PL...
729
Authors: Yong June Choi, Kyung Mun Kang, Hyung Ho Park
Chapter 10: Engineering Materials and Processing Technologies
Abstract:The post-annealing effects on the surface morphological changes of undoped and Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer...
2492
Authors: J.L. Tian, Gui Gen Wang, Hua Yu Zhang
Abstract:ZnO thin films were deposited on Si (100) substrates by atomic layer deposition. Annealing treatments for the as-deposited films were...
92