Paper Title:
Photo- and Electroluminescence of Hydrogenated Nanocrystalline Si Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques
  Abstract

We studied photoluminescence (PL) and electroluminescence (EL) properties of hydrogenated nanocystalline silicon (nc-Si:H) thin films prepared by applying the plasma enhanced chemical vapor deposition (PECVD) techniques. . A prototype of ITO/nc-Si:H/P-type Si wafer/Al EL devices was illustrated with its fundamental electrical and optical features. The nc-Si:H films exhibited PL spectra in a wavelength range of 350 ~ 700 nm with the maximum intensity at ~ 530 nm, which is attributed to quantum confinement effects (QCE) owing to the presence of nanocrystalline Si. The EL device produced EL spectra with their maximum intensity at ~ 525 nm which are similar to the PL spectra. The light emission is attributed to radiative recombination related to nanocrystalline Si contained in the hydrogenated amorphous Si (a-Si:H).

  Info
Periodical
Materials Science Forum (Volumes 510-511)
Edited by
Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee
Pages
958-961
DOI
10.4028/www.scientific.net/MSF.510-511.958
Citation
J. H. Shim, N. H. Cho, "Photo- and Electroluminescence of Hydrogenated Nanocrystalline Si Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques", Materials Science Forum, Vols. 510-511, pp. 958-961, 2006
Online since
March 2006
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$32.00
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