Paper Title:
Effect of the Matrix on the 1.5μm Photoluminescence of Er-Doped Silicon Quantum Dots
  Abstract

Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f. sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 µm photoluminescence is discussed.

  Info
Periodical
Materials Science Forum (Volumes 514-516)
Edited by
Paula Maria Vilarinho
Pages
1116-1120
DOI
10.4028/www.scientific.net/MSF.514-516.1116
Citation
M.F. Cerqueira, M. Stepikhova, M. Losurdo, T. Monteiro, M. J. Soares, M. Peres, A. Neves, E. Alves, "Effect of the Matrix on the 1.5μm Photoluminescence of Er-Doped Silicon Quantum Dots", Materials Science Forum, Vols. 514-516, pp. 1116-1120, 2006
Online since
May 2006
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