Paper Title:
ITO Thin Films on Silicon Buffer by Sol Gel Method
  Abstract

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

  Info
Periodical
Materials Science Forum (Volumes 514-516)
Edited by
Paula Maria Vilarinho
Pages
1155-1160
DOI
10.4028/www.scientific.net/MSF.514-516.1155
Citation
T. M. Hammad, "ITO Thin Films on Silicon Buffer by Sol Gel Method", Materials Science Forum, Vols. 514-516, pp. 1155-1160, 2006
Online since
May 2006
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Price
$32.00
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