Paper Title:
Low Pressure RF Plasma Jet Sputtering Technique Applied to Ferroelectric Films: Ba1-x SrxTiO3
  Abstract

Technology aspects and characterization of BaxSr1-xTiO3 (BST) films fabricated with low pressure plasma jet technique are presented. BST films were deposited on silicon coated with Pt/TiO2/SiO2 and on bare Si substrates. The nozzles-type RF hollow cathode has been fabricated from hot pressed BaTiO3, SrTiO3, and BST ceramics. Controlling of RF voltage, RF current and substrate temperature allowed us to deposit reproducible films with controlled grain size. Hysteresis loops, ellipsometric and micro-Raman investigation results are presented and discussed.

  Info
Periodical
Materials Science Forum (Volumes 514-516)
Edited by
Paula Maria Vilarinho
Pages
165-169
DOI
10.4028/www.scientific.net/MSF.514-516.165
Citation
A. Deyneka, Z. Hubička, V.A. Trepakov, G. Suchaneck, L. Jastrabik, G. Gerlach, J. Pokorny, D. Chvostova, J. Olejníček, "Low Pressure RF Plasma Jet Sputtering Technique Applied to Ferroelectric Films: Ba1-x SrxTiO3 ", Materials Science Forum, Vols. 514-516, pp. 165-169, 2006
Online since
May 2006
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$32.00
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