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Low Pressure RF Plasma Jet Sputtering Technique Applied to Ferroelectric Films: Ba1-x SrxTiO3

Journal Materials Science Forum (Volumes 514 - 516)
Volume Advanced Materials Forum III
Edited by Paula Maria Vilarinho
Pages 165-169
DOI 10.4028/www.scientific.net/MSF.514-516.165
Citation Alexander Deyneka et al., 2006, Materials Science Forum, 514-516, 165
Online since May, 2006
Authors Alexander Deyneka, Zdenek Hubička, V.A. Trepakov, Gunnar Suchaneck, Lubomir Jastrabík, Gerald Gerlach, Jan Pokorny, Dasgmar Chvostova, J. Olejníček
Keywords BST, Ferroelectric Thin Film, Plasma Jet
Abstract

Technology aspects and characterization of BaxSr1-xTiO3 (BST) films fabricated with low pressure plasma jet technique are presented. BST films were deposited on silicon coated with Pt/TiO2/SiO2 and on bare Si substrates. The nozzles-type RF hollow cathode has been fabricated from hot pressed BaTiO3, SrTiO3, and BST ceramics. Controlling of RF voltage, RF current and substrate temperature allowed us to deposit reproducible films with controlled grain size. Hysteresis loops, ellipsometric and micro-Raman investigation results are presented and discussed.

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