Paper Title:
Relaxor-Like Behavior of Self-Polarized Pb(Zr,Ti)O3 Thin Films
  Abstract

Self-polarized Pb(Ti,Zr)O3 thin films deposited under lead enriched conditions by multitarget reactive sputtering at low substrate temperatures are characterized by tetravalent B-site occupation of excess lead. The imaginary part of the dielectric constant of such films shows a relaxor-like behavior. Evidence of a Pb2+/Pb4+ mixed valence is given by the temperature and frequency dependence of the ac conductivity. PbO volatility starts to deplete the growing film at a critical temperature of 500°C and Pb4+ formation disappears.

  Info
Periodical
Materials Science Forum (Volumes 514-516)
Edited by
Paula Maria Vilarinho
Pages
175-178
DOI
10.4028/www.scientific.net/MSF.514-516.175
Citation
G. Suchaneck, A. Deyneka, L. Jastrabik, G. Gerlach, "Relaxor-Like Behavior of Self-Polarized Pb(Zr,Ti)O3 Thin Films", Materials Science Forum, Vols. 514-516, pp. 175-178, 2006
Online since
May 2006
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