Paper Title:
Microstructure Characterization and Dielectric Properties of La4Mg3W3O18 Layered Oxide
  Abstract

The microstructure development and the dielectric properties of La4Mg3W3O18 layered oxide were investigated. A strong anisotropic grain growth is revealed in ceramics sintered above 1400oC. The anisotropy of the grain reflects the anisotropic character of the crystal structure. Dielectric measurements yield a relative dielectric permittivity, ε, and a temperature coefficient of the dielectric permittivity, TC ε, to be 21 and 95 ppm K-1, respectively. The positive value of TC ε is assumed to be caused by the octahedral tilting by analogy with the behaviour of other complex ordered perovskites.

  Info
Periodical
Materials Science Forum (Volumes 514-516)
Edited by
Paula Maria Vilarinho
Pages
255-258
DOI
10.4028/www.scientific.net/MSF.514-516.255
Citation
D. D. Khalyavin, A. M. R. Senos, P. Q. Mantas, "Microstructure Characterization and Dielectric Properties of La4Mg3W3O18 Layered Oxide ", Materials Science Forum, Vols. 514-516, pp. 255-258, 2006
Online since
May 2006
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$32.00
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