Paper Title:
Study of the High Frequency Dielectric Properties of SrBi2 Ta2O9 Ferroelectric Thin Films
  Abstract

In recent years several ferroelectric thin films have been studied at microwave frequencies; lead zirconate titanate (PZT) and barium-strontium titanate (BST) has been widely investigated. However, the microwave dielectric properties of strontium-bismuth tantalate (SBT) have not yet been investigated so widely [1]. The purpose of this work is the microwave characterization of the dielectric properties of an SBT thin film biased at different DC voltages. The dielectric properties of SBT make it a good material for the production of FERAM memories. Microwave characterizations may show other properties that could promote the SBT as good candidate for capacitors to be employed also in microwave circuits (e.g. resonators and filters). In this work a study of high frequency dielectric properties has been performed and equivalent circuit model has been used to correct the measurements.

  Info
Periodical
Materials Science Forum (Volumes 514-516)
Edited by
Paula Maria Vilarinho
Pages
259-263
DOI
10.4028/www.scientific.net/MSF.514-516.259
Citation
N. Delmonte, B. E. Watts, F. Leccabue, P. Cova, G. Chiorboli, "Study of the High Frequency Dielectric Properties of SrBi2 Ta2O9 Ferroelectric Thin Films", Materials Science Forum, Vols. 514-516, pp. 259-263, 2006
Online since
May 2006
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Price
$32.00
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