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Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices

Journal Materials Science Forum (Volumes 514 - 516)
Volume Advanced Materials Forum III
Edited by Paula Maria Vilarinho
Pages 3-7
DOI 10.4028/www.scientific.net/MSF.514-516.3
Citation Elvira Fortunato et al., 2006, Materials Science Forum, 514-516, 3
Online since May, 2006
Authors Elvira Fortunato, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira, Leandro Raniero, Gonçalo Gonçalves, Isabel Ferreira, Rodrigo Martins
Keywords RF Magnetron Sputtering, Transparent Conductive Oxide, UV/ozone sensors, ZnO Thin Films
Abstract

In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.

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