Paper Title:
Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers
  Abstract

This paper concerns the structural and optical properties of the group III-V semiconductor alloy, indium gallium nitride (InGaN). We focus on the reasons of interest to study InGaN. Recent advances regarding the basic understanding (ex. accurate composition determination) and some yet unclear issues (ex. phase separation) regarding this material system, are also briefly discussed. Illustrative results on the light emitting and structural properties are presented.

  Info
Periodical
Materials Science Forum (Volumes 514-516)
Edited by
Paula Maria Vilarinho
Pages
38-42
DOI
10.4028/www.scientific.net/MSF.514-516.38
Citation
S. Pereira, M.R. Correia, E. Alves, "Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers", Materials Science Forum, Vols. 514-516, pp. 38-42, 2006
Online since
May 2006
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Price
$32.00
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