Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers |
| Journal |
Materials Science Forum (Volumes 514 - 516) |
| Volume |
Advanced Materials Forum III |
| Edited by |
Paula Maria Vilarinho |
| Pages |
38-42 |
| DOI |
10.4028/www.scientific.net/MSF.514-516.38 |
| Online since |
May, 2006 |
| Authors |
Sergio Pereira,
M.R. Correia,
Eduardo Alves
|
| Keywords |
Composition, InGaN, Semiconductor Alloy, Strain, X-Ray Diffraction (XRD) |
| Abstract |
This paper concerns the structural and optical properties of the group III-V
semiconductor alloy, indium gallium nitride (InGaN). We focus on the reasons of interest to study InGaN. Recent advances regarding the basic understanding (ex. accurate composition determination) and some yet unclear issues (ex. phase separation) regarding this material system, are also briefly discussed. Illustrative results on the light emitting and structural properties are presented. |
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