Electrical Performances of Low Temperature Annealed Hafnium Oxide Deposited at Room Temperature |
| Journal |
Materials Science Forum (Volumes 514 - 516) |
| Volume |
Advanced Materials Forum III |
| Edited by |
Paula Maria Vilarinho |
| Pages |
58-62 |
| DOI |
10.4028/www.scientific.net/MSF.514-516.58 |
| Online since |
May, 2006 |
| Authors |
Luís Pereira,
Pedro Barquinha,
Elvira Fortunato,
Rodrigo Martins
|
| Keywords |
Annealing, Hafnium Oxide, Sputtering |
| Abstract |
In this work, HfO2 was deposited by r.f. sputtering at room temperature and then
annealed for different times at 200ºC in a forming gas atmosphere. After annealing for 2 hours the HfO2 layers present a reduction on the flat band voltage of about 1 V, relatively to the as deposited film, decreasing from -2.23V down to -1.28 V. This means an improvement of the interface properties and a reduction on the oxide charge density from 1.33×1012 cm-2 to 7.62×1011 cm-2. The dielectric constant reaches a maximum of 18.3 after 5h annealing due to film’s densification. When
annealing for longer times such as 10h a small degradation of the electrical properties is observed. After 10h annealing the dielectric constant, flat band voltage and fixed charge density are respectively, 14.9, -2.96 V and 1.64 ×1012 cm-2 and the leakage current also increases due to film’s crystallization. |
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