Paper Title:
Concentration Effects on n-GaN Schottky Diode Current-Voltage (i-v) Characteristics
  Abstract

We focus on the epi layer carrier concentration variation effects to improve the current – voltage (I-V) characteristics of an n-GaN schottky diode. The carrier concentration of 1×10 15cm-3, 1×1016 cm−3, 1×1017 cm−3 were employed. The simulated current was obtained by forward biasing the device of up to 2Volt at room temperature using Pt electrode. The study was conducted by using Atlas/Blaze using various models such as Consrh (Concentration Dependent Shockley Read Hall), Cvt (Lombardi Model), Fermi (Fermi Dirac), Bgn (Bandgap Narrowing), Conmob (Concentration Dependent Mobility), Auger (Auger). We found that as the concentration increases the value of forward current also increase linearly when biased at maximum of 2 volts. The reverse bias characteristics at the same concentration of the simulated diode up to 100Volt were also determined. We found that at low carrier concentration the reverse leakage current is minimum and breakdown voltage is maximum. As the carrier concentration increases there is a linear relationship between reverse leakage current and epi layer doping carrier concentration. By analyzing the forward and reverse characteristics we conclude that in forward bias for low carrier concentration the diode shows schottky rectifying behavior while for higher carrier concentration the diode shows ohmic behavior. For higher carrier concentration there is a linear relationship between carrier concentration (n) and forward current. The reverse leakage current is minimum approaching an ideal value at n≤1×1015cm-3 and breakdown voltage is maximum at these values of concentration. Increasing the concentration from n≤1×1015cm-3 the value of reverse leakage current is approaching to the maximum value as a result breakdown voltage decreases. We conclude that for n-GaN schottky diode the ideal schottky rectifying behavior of I-V characteristics is obtained at carrier concentration of n≤ 1×1015cm-3 for the simulated diodes at different carrier concentration.

  Info
Periodical
Edited by
A.K. Arof and S.A. Hashim Ali
Pages
159-164
DOI
10.4028/www.scientific.net/MSF.517.159
Citation
T. Munir, A. A. Aziz, M. J. Abdullah, N. M. Ahmed, "Concentration Effects on n-GaN Schottky Diode Current-Voltage (i-v) Characteristics", Materials Science Forum, Vol. 517, pp. 159-164, 2006
Online since
June 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: N. Biyikli, Cole W. Litton, J. Xie, Y.T. Moon, F. Yun, C.G. Stefanita, S. Bandyopadhyay, J.R. Meyer, Hadis Morkoç
Abstract:Carrier transport properties of AlGaN/GaN heterostructures have been analyzed with the quantitative mobility spectrum analysis (QMSA)...
1533
Authors: Dorothea Werber, Martin Aigner, D. Denoth, F. Wittmann, Gerhard Wachutka
Abstract:We present an experimental equipment for studying the charge carrier distribution in the interior of bipolar 4H-SiC high power devices by...
493
Authors: T. Kitamura, Shinichi Nakashima, Tomohisa Kato, K. Kojima, Hajime Okumura
Abstract:We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial films with various carrier densities by Raman scattering...
501
Authors: Georgios Manolis, Georgios Zoulis, Sandrine Juillaguet, Jean Lorenzzi, Gabriel Ferro, Jean Camassel, Kęstutis Jarašiūnas
Abstract:Thin 3C-SiC(111) epilayers grown on 6H-SiC(0001) substrate by VLS and CVD procedures were studied by low temperature photoluminescence (LTPL)...
443
Authors: Paul B. Klein
Chapter 3: Physical Properties and Characterization of SiC
Abstract:Recent advances in preparing n-type 4H-SiC with long carrier lifetimes have greatly enhanced the possibility of realizing commercially...
279