Paper Title:
Optimization of InGaN Based Light Emitting Diodes
  Abstract

The performance of InGaN quantum well based Light Emitting Diodes; (LEDs) had been numerically investigated by using standard industrial software, Silvaco. In this work, we found that InGaN single quantum well (SQW) LEDs gives better performance than InGaN triple quantum wells LEDs. The simulation results suggest that the inhomogeneity of electron and hole distributions in quantum wells active region plays an important role in the LEDs performance. The threshold current per μm also increases as the number of quantum well is increased.

  Info
Periodical
Edited by
A.K. Arof and S.A. Hashim Ali
Pages
195-201
DOI
10.4028/www.scientific.net/MSF.517.195
Citation
N. Zainal, A. H. Haslan, H. Zainuriah, M. R. Hashim, N. M. Ahmed, "Optimization of InGaN Based Light Emitting Diodes", Materials Science Forum, Vol. 517, pp. 195-201, 2006
Online since
June 2006
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