Paper Title:
Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN
  Abstract

Pd Schottky diode exhibited stable rectifying behavior up to 500°C for 35 minutes in sequential annealing; with the Schottky barrier heights (SBHs), ΦB (I-V) of 0.6-0.7eV with the leakage current (LC) of 20 A at -5V. With the same range of SBHs, PdSi diodes were stable up to 500°C for 5 minutes with the LC of 0.182mA at -5V. The electrical characteristics obtained in this study are also compared with those obtained for Pd and PdSi Schottky diodes on p-GaN.

  Info
Periodical
Edited by
A.K. Arof and S.A. Hashim Ali
Pages
242-246
DOI
10.4028/www.scientific.net/MSF.517.242
Citation
C.K. Tan, A. A. Aziz, F.K. Yam, C.W. Lim, H. Zainuriah, A.Y. Hudeish, "Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN", Materials Science Forum, Vol. 517, pp. 242-246, 2006
Online since
June 2006
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