Paper Title:
Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)
  Abstract

The effects of Indium doped on Porous Silicon Nanostructure (PSN) have been studied. The Electroluminescence studies on Indium-doped porous silicon nanostructure (In:PSN) are presented. The main objective of this paper is study the EL effects of Indium doping on PSN. Porous silicon nanostructure layers have been formed by anodically etching unpolished p-type Si [100] wafer with surface resistivity of 1-10 ohm cm-1 in Hydroflouric (HF) solution at 1:1 ratio of Ethanol. Indium (In) was doped on PSN using cathodic electrodeposition composed of InCl3 and ethanol electrolythe. A diode structure has been fabricated comprising semi-transparent Au/In:PSN/p-Si substrate/Al ohmic contact electrode to observe the EL spectra. The In:PSN device shows increasing on EL and PL Intensity as well as blue-shift EL and PL spectrum is observed. Possible reasons for the enhancement will be discussed. Technological application of PSN as a light emitter would have significant impact on numerous technologies such as display panels or integrated circuits with optoelectronic devices (IO) on board and sensors.

  Info
Periodical
Edited by
A.K. Arof and S.A. Hashim Ali
Pages
267-271
DOI
10.4028/www.scientific.net/MSF.517.267
Citation
S. Abdullah, M. R. Muhamad, K.A. Sekak, "Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)", Materials Science Forum, Vol. 517, pp. 267-271, 2006
Online since
June 2006
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