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Photovoltaic Properties of Semiconductor (ZnSe)/Polymer (PEO - Chitosan Blend) Junction for Solar Cells Applications

Journal Materials Science Forum (Volume 517)
Volume Functional Materials and Devices
Edited by A.K. Arof and S.A. Hashim Ali
Pages 287-289
DOI 10.4028/www.scientific.net/MSF.517.287
Citation S.A. Mohamad et al., 2006, Materials Science Forum, 517, 287
Online since June, 2006
Authors S.A. Mohamad, M.H. Ali, Z.A. Ibrahim, A.K. Arof
Keywords Chitosan (CS), Photovoltaic Properties, Polymer (PEO: NH4I (+I2)), Semiconductor ZnSe
Abstract

The properties of ZnSe/PEO junction photoelectrochemical cells have been studied under dark and illuminated conditions. ZnSe was electrodeposited onto an indium tin oxide (ITO) glass and the polymer film of PEO-chitosan: NH4I (+I2) was placed over it followed by another ITO glass. The polymer film was prepared by the solution cast technique. The open circuit voltage (Voc) of the fabricated cells was between 300 mV to 400 mV. In the dark the device operates as a diode while under illumination it operates as a photoelectrochemical cell.

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