Paper Title:
Response Mechanism of Pd-GaN Schottky Barriers Comparative to Pd-Si Gas Sensors
  Abstract

In this paper we report on the characteristics of Pd/GaN and Pd/Si Schottky barriers exposed to different gases at various temperature range from 25°C to 500°C. The characteristics of Pd/GaN and Pd/Si Schottky barriers as gas sensors were measured as a function of temperature and ambient. Both types of sensor show changes in forward current upon introduction of different gases (N2, air, H2) into the ambient. The devices can be operated at large forward current, leading to large signal size for current at short response time for switching from one gas ambient to another such as N2 to H2 (2%) in N2. The signal size increases with the increase in measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.

  Info
Periodical
Edited by
A.K. Arof and S.A. Hashim Ali
Pages
61-64
DOI
10.4028/www.scientific.net/MSF.517.61
Citation
A.Y. Hudeish, C.K. Tan, A. A. Aziz, H. Zainuriah, "Response Mechanism of Pd-GaN Schottky Barriers Comparative to Pd-Si Gas Sensors ", Materials Science Forum, Vol. 517, pp. 61-64, 2006
Online since
June 2006
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