Epitaxial GaN Film Grown at Low Temperature by Hydrogen-Plasma Assisted MOCVD
|
| Journal |
Materials Science Forum (Volume 517) |
| Volume |
Functional Materials and Devices |
| Edited by |
A.K. Arof and S.A. Hashim Ali |
| Pages |
9-12 |
| DOI |
10.4028/www.scientific.net/MSF.517.9 |
| Online since |
June, 2006 |
| Authors |
F.K. Yam,
Z. Hassan,
K. Ibrahim,
M. Barmawi,
Sugianto,
M. Budiman,
P. Arifin
|
| Keywords |
Buffer Layer, Characterization, Gallium Nitride, Hydrogen Plasma |
| Abstract |
A comparative study of the structural and electrical properties of GaN films grown by
plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) at 700°C, with and
without AlN buffer layer is presented . Hydrogen plasma was used in addition to nitrogen plasma to
produce GaN. The introduction of H-plasma is found to influence the properties of the films.
Scanning electron microscopy (SEM), atomic force microscopy (AFM) and Hall Effect
measurements show that the sample with AlN buffer layer possesses a smoother and more
homogenous morphological characteristics as well as a lower background electron and higher Hall
mobility as compared to the sample without buffer layer. X-ray diffraction (XRD) reveals that
hydrogenation is capable of producing the epitaxial GaN films at reduced temperatures with the full
width at half maximum (FWHM) of the x-ray rocking (XRC) of GaN (0002) reflection was found
to be 54.8 and 256 arcmin for samples with buffer layer and without buffer layer, respectively. |
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