Paper Title:
Epitaxial GaN Film Grown at Low Temperature by Hydrogen-Plasma Assisted MOCVD
  Abstract

A comparative study of the structural and electrical properties of GaN films grown by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) at 700°C, with and without AlN buffer layer is presented . Hydrogen plasma was used in addition to nitrogen plasma to produce GaN. The introduction of H-plasma is found to influence the properties of the films. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and Hall Effect measurements show that the sample with AlN buffer layer possesses a smoother and more homogenous morphological characteristics as well as a lower background electron and higher Hall mobility as compared to the sample without buffer layer. X-ray diffraction (XRD) reveals that hydrogenation is capable of producing the epitaxial GaN films at reduced temperatures with the full width at half maximum (FWHM) of the x-ray rocking (XRC) of GaN (0002) reflection was found to be 54.8 and 256 arcmin for samples with buffer layer and without buffer layer, respectively.

  Info
Periodical
Edited by
A.K. Arof and S.A. Hashim Ali
Pages
9-12
DOI
10.4028/www.scientific.net/MSF.517.9
Citation
F.K. Yam, H. Zainuriah, K. Ibrahim, M. Barmawi, Sugianto, M. Budiman, P. Arifin, "Epitaxial GaN Film Grown at Low Temperature by Hydrogen-Plasma Assisted MOCVD ", Materials Science Forum, Vol. 517, pp. 9-12, 2006
Online since
June 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Naru Nemoto, Naoki Wakiya, Kazuo Shinozaki, Takanori Kiguchi, Keisuke Satoh, Masatoshi Ishii, Masao Kondo, Kazuaki Kurihara, Nobuyasu Mizutani
Abstract:Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers....
265
Authors: Jae Min Jang, Sung Hak Yi, Seung Kyu Choi, Jeong A Kim, Woo Gwang Jung
Abstract:3D type flower-like ZnO nanostructure is fabricated on GaN epitaxial layer by hydrothermal synthesis. The formation of ZnO nanostructures is...
555
Authors: Yasuo Hirabayashi, Satoru Kaneko, Kensuke Akiyama
Abstract:The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without...
247
Authors: Elena Tschumak, Katja Tonisch, Jörg Pezoldt, Donat J. As
Abstract:Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction....
943
Authors: Zhen Zhu, Jin Ma, Cai Na Luan, Fan Yang, Ling Yi Kong
Abstract:SnO2 thin films have been deposited on 6H-SiC(0001) substrates by metalorganic chemical vapor deposition (MOCVD) system. The structural and...
1539