Paper Title:
Annealing Effects on GaN/ZnO/Si Structures Prepared by RF Magnetron Sputtering
  Abstract

This study shows the effect of thermal annealing on GaN/ZnO/Si structures prepared by rf magnetron sputtering. Thermal annealing tended to induce a different crystalline orientation from the c-axis orientation observed with as-deposited films. The sample annealed at 900 oC under excitation at 325 nm showed two emission bands centered at approximately 380 and 550 nm.

  Info
Periodical
Edited by
Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic
Pages
137-142
DOI
10.4028/www.scientific.net/MSF.518.137
Citation
H. W. Kim, S.H. Shim, C. Lee, "Annealing Effects on GaN/ZnO/Si Structures Prepared by RF Magnetron Sputtering", Materials Science Forum, Vol. 518, pp. 137-142, 2006
Online since
July 2006
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