Composition Dependent Resonant Raman Scattering in Al0.33Ga0.67As/InxGa1-xAs1-yNy Multiquantum Wells |
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| Journal | Materials Science Forum (Volume 518) |
|---|---|
| Volume | Recent Developments in Advanced Materials and Processes |
| Edited by | Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic |
| Pages | 17-22 |
| DOI | 10.4028/www.scientific.net/MSF.518.17 |
| Citation | S. Lazić et al., 2006, Materials Science Forum, 518, 17 |
| Online since | July, 2006 |
| Authors | S. Lazić, J.M. Calleja, R. Hey, K. Ploog |
| Keywords | InxGa1-xAs1-yNy Multiquantum Wells, Local Vibration Mode, Resonant Raman Scattering |
| Abstract | InxGa1-xAs1-yNy/Al0.33Ga0.67As multiquantum wells grown by plasma-assisted molecular beam epitaxy are studied by resonant inelastic light scattering. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm-1. Their intensities resonate at the barrier bandgap reduced by the presence of N. Their resonance energies reveal the influence of the N concentration on the barrier gap at the multiquantum well interfaces. These peaks are interpreted in terms of local vibrations involving the pairing of N atoms, which seems to occur mostly at the quantum well interfaces due to preferential bonding of N to Al. |
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