Materials Science & Technology

FULLTEXT SEARCH
NEW: Advanced Search

Magnetoexcitons in Type-II Self-Assembled Quantum Dots and Quantum-Dot Superlattices

Journal Materials Science Forum (Volume 518)
Volume Recent Developments in Advanced Materials and Processes
Edited by Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic
Pages 51-56
DOI 10.4028/www.scientific.net/MSF.518.51
Online since July, 2006
Authors Dj. Veljković, M. Tadić, F.M. Peeters
Keywords Exciton, Quantum Dots (QDs), Self-Assembled
Abstract Exciton states in type-II InP/InGaP and GaSb/GaAs self-assembled quantum dots and quantum-dot superlattices subject to a normal magnetic field are calculated. Strain is explicitly taken into account in single particle models of the electronic structure, while an exact diagonalization approach is adopted to compute the exciton states. Strain reverts type II band alignment in InP quantum dots to type I, therefore no transitions between the lowest energy states of different angular momenta are observed. On the other hand, strain increases the barrier for the electron in the conduction band of GaSb/GaAs quantum dots, therefore the exciton, being composed of electron and hole states of various angular momenta, may have a finite angular momentum in the ground state. Consequently, the oscillator strength in the InP single quantum dot and quantum-dot superlattice increases with the magnetic field, while the angular momentum transitions between the bright and the dark exciton states in the GaSb system bring about decay of the oscillator strength when the magnetic field exceeds a certain value.
Full Paper PDF Get the full paper by clicking here
Preview PDF Free first page example