Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures |
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| Journal | Materials Science Forum (Volume 518) |
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| Volume | Recent Developments in Advanced Materials and Processes |
| Edited by | Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic |
| Pages | 57-62 |
| DOI | 10.4028/www.scientific.net/MSF.518.57 |
| Citation | M. Radmilović-Radjenović et al., 2006, Materials Science Forum, 518, 57 |
| Online since | July, 2006 |
| Authors | M. Radmilović-Radjenović, Aleksandra Nina, A. Strinić, V. Stojanović, Željka Nikitović, G.N. Malović, Z.Lj. Petrović |
| Keywords | Charging Damage, Etching, Nanoscale Device, Neutralization Efficiency, Ultra Large Scale Integrated Technologies |
| Abstract | Neutral beam etching is proposed as a candidate for reducing plasma-process-induced damage in nanoscale devices. In this paper, neutralization of ion beams due to both gas phase collisions and ion surface interactions based on a PIC (Particle in Cell) simulation of realistic Capacitively Coupled Plasma is presented. It was found that a satisfactory degree of neutralization might be achieved by a combined effect of charge transfer and surface collisions. |
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