Paper Title:
Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures
  Abstract

Neutral beam etching is proposed as a candidate for reducing plasma-process-induced damage in nanoscale devices. In this paper, neutralization of ion beams due to both gas phase collisions and ion surface interactions based on a PIC (Particle in Cell) simulation of realistic Capacitively Coupled Plasma is presented. It was found that a satisfactory degree of neutralization might be achieved by a combined effect of charge transfer and surface collisions.

  Info
Periodical
Edited by
Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic
Pages
57-62
DOI
10.4028/www.scientific.net/MSF.518.57
Citation
M. Radmilović-Radjenović, A. Nina, A. Strinić, V. Stojanović, Ž. Nikitović, G.N. Malović, Z.L. Petrović, "Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures ", Materials Science Forum, Vol. 518, pp. 57-62, 2006
Online since
July 2006
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