Microstructures of SiO2 Scales Formed on MoSi2 |
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| Journal | Materials Science Forum (Volumes 522 - 523) |
|---|---|
| Volume | High-Temperature Oxidation and Corrosion 2005 |
| Edited by | Shigeji Taniguchi, Toshio Maruyama, Masayuki Yoshiba, Nobuo Otsuka and Yuuzou Kawahara |
| Pages | 595-602 |
| DOI | 10.4028/www.scientific.net/MSF.522-523.595 |
| Citation | Kazuya Kurokawa et al., 2006, Materials Science Forum, 522-523, 595 |
| Online since | August, 2006 |
| Authors | Kazuya Kurokawa, Daichi Goto, Jyunichi Kuchino, Akira Yamauchi, Tamaki Shibayama, Heishichiro Takahashi |
| Keywords | Microstructure of Oxide Scale, MoSi2, Oxidation, TEM |
| Abstract | The microstructures of oxide scales formed on MoSi2 at medium-high temperatures in air were observed by TEM. Based on the observation, relationships between oxidation temperature and formation of MoO3 and crystallization of amorphous SiO2 scales were investigated. At 1273 K and 1373 K, the oxide scales had a structure consisting of amorphous SiO2 with small amounts of fine MoO3 particles. The oxide scales at 1573 K and 1773 K had a structure consisting of amorphous and crystalline SiO2. Growth rate of the oxide scale formed at 1773 K appreciably increased due to crystallization of amorphous SiO2. It was thought that the increase in the oxidation rate at 1773 K was caused by a change in the diffusion mechanism from O2 diffusion to lattice diffusion of O2- through SiO2. In addition, the diffusion coefficient of oxygen was estimated from the growth rate of SiO2 scale. |
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