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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p3 Reduction of Dislocations in the Bulk Growth of SiC Crystals
  Authors: Daisuke Nakamura
• p9 The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals   [ 561 K ]
  Authors: H. J. Rost, M. Schmidbauer, D. Siche
• p15 Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters   [ 378 K ]
  Authors: Roman Drachev, E. Deyneka, C. Rhodes, J. Schupp, Tangali S. Sudarshan
• p21 Halide-CVD Growth of Bulk SiC Crystals   [ 1 M ]
  Authors: A.Y. Polyakov, Mark A. Fanton, Marek Skowronski, Hun Jae Chung, Saurav Nigam, Sung Wook Huh
• p27 Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC   [ 1 M ]
  Authors: Saurav Nigam, Hun Jae Chung, Sung Wook Huh, J.R. Grim, A.Y. Polyakov, Mark A. Fanton, B.E. Weiland, David W. Snyder, Marek Skowronski
• p31 Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates   [ 241 K ]
  Authors: Jason R. Jenny, D.P. Malta, V.T. Tsvetkov, Mrinal K. Das, H. McD. Hobgood, Calvin H. Carter Jr.
• p35 Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds   [ 906 K ]
  Authors: Tomoaki Furusho, Ryota Kobayashi, Taro Nishiguchi, M. Sasaki, K. Hirai, Toshihiko Hayashi, Hiroyuki Kinoshita, Hiromu Shiomi
• p39 Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)   [ 2 M ]
  Authors: C. Basceri, I. Khlebnikov, Y. Khlebnikov, P. Muzykov, M. Sharma, G. Stratiy, M. Silan, Cengiz M. Balkas
• p43 Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals   [ 550 K ]
  Authors: A. Gupta, E. Semenas, Ejiro Emorhokpor, J. Chen, Ilya Zwieback, Andrew E. Souzis, Thomas Anderson
• p47 Growth of SiC Boules with Low Boron Concentration   [ 37 K ]
  Authors: Mark A. Fanton, R.L. Cavalero, R.G Ray, B.E. Weiland, W.J. Everson, David W. Snyder, Rick D. Gamble, Ed Oslosky
• p51 Resistivity Distribution in Undoped 6H-SiC Boules and Wafers   [ 142 K ]
  Authors: Qiang Li, A.Y. Polyakov, Marek Skowronski, Edward K. Sanchez, Mark J. Loboda, Mark A. Fanton, Timothy Bogart, Rick D. Gamble, N.B. Smirnov, Yuri N. Makarov
• p55 The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source   [ 369 K ]
  Authors: Kwan Mo Kim, Soo Hyung Seo, Jae Woo Kim, Joon Suk Song, Myung Hwan Oh, Wook Bahng, Eun Dong Kim
• p59 A Study of Nitrogen Incorporation in PVT Growth of n⁺ 4H SiC   [ 175 K ]
  Authors: D.M. Hansen, Gil Yong Chung, Mark J. Loboda
• p63 In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging   [ 318 K ]
  Authors: Didier Chaussende, Peter J. Wellmann, M. Ucar, Michel Pons, Roland Madar
• p67 Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals   [ 1 M ]
  Authors: Govindhan Dhanaraj, Yi Chen, Michael Dudley, Hui Zhang