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Silicon Carbide and Related Materials 2005

Volumes 527 - 529
doi: 10.4028/www.scientific.net/MSF.527-529
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Preface

Reduction of Dislocations in the Bulk Growth of SiC Crystals

Authors: Daisuke Nakamura

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The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals

Authors: H. J. Rost, M. Schmidbauer, D. Siche

9

Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters

Authors: Roman Drachev, E. Deyneka, C. Rhodes, J. Schupp, Tangali S. Sudarshan

15

Halide-CVD Growth of Bulk SiC Crystals

Authors: A.Y. Polyakov, Mark A. Fanton, Marek Skowronski, Hun Jae Chung, Saurav Nigam, Sung Wook Huh

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Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC

Authors: Saurav Nigam, Hun Jae Chung, Sung Wook Huh, J.R. Grim, A.Y. Polyakov, Mark A. Fanton, B.E. Weiland, David Snyder, Marek Skowronski

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Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates

Authors: Jason R. Jenny, D.P. Malta, V.T. Tsvetkov, Mrinal K. Das, H. McD. Hobgood, Calvin H. Carter Jr.

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Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds

Authors: Tomoaki Furusho, Ryota Kobayashi, Taro Nishiguchi, M. Sasaki, K. Hirai, Toshihiko Hayashi, Hiroyuki Kinoshita, Hiromu Shiomi

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