Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces |
| Journal |
Materials Science Forum (Volumes 527 - 529) |
| Volume |
Silicon Carbide and Related Materials 2005 |
| Edited by |
Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages |
1003-1006 |
| DOI |
10.4028/www.scientific.net/MSF.527-529.1003 |
| Citation |
Yasuto Hijikata et al., 2006, Materials Science Forum, 527-529, 1003 |
| Online since |
October, 2006 |
| Authors |
Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Y. Takata, K. Kobayashi, H. Nohira, T. Hattori |
| Keywords |
(000-1) C-Face, Capacitance-Voltage, Dry Oxidation, Interface States (or Traps), Off-Angle, Oxide-SiC Interface, Photomission spectroscopy, Suboxide, Wet Oxidation |
| Full Paper |
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