Paper Title:
Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?
  Abstract

The high density of interface electron traps in the SiC/SiO2 system, near the conduction band of 4H-SiC, is often ascribed to graphitic carbon islands at the interface, although such clusters could not be detected by high resolution microscopy. We have calculated the electronic structure of a model interface containing a small graphite-like precipitate of 19 carbon atoms, with a diameter of ~7 Å, corresponding to the experimental detection limit. The analysis of the density of states shows only occupied states in the band gap of 4H-SiC near the valence band edge, while carbon related unoccupied states appear only well above the conduction band edge.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1019-1022
DOI
10.4028/www.scientific.net/MSF.527-529.1019
Citation
C. Thill, J. Knaup, P. Deák, T. Frauenheim, W. J. Choyke, "Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?", Materials Science Forum, Vols. 527-529, pp. 1019-1022, 2006
Online since
October 2006
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