Paper Title:
Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces
  Abstract

Scanning tunneling microscopy and spectroscopy have been used to study the electronic states of oxidized 6H-SiC interfaces. The SiC surfaces were oxidized by annealing in an ultra-high vacuum chamber at 600−800°C under 1×10-7 Torr pressure of molecular oxygen. Tunneling spectra revealed two dominant states at –1.8 and 1.5 eV relative to the Fermi level, which lie outside the band gap region but are inhomogeneously broadened such that they extend into the gap, together with additional features within the band gap.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1023-1026
DOI
10.4028/www.scientific.net/MSF.527-529.1023
Citation
S. Nie, R.M. Feenstra, "Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces", Materials Science Forum, Vols. 527-529, pp. 1023-1026, 2006
Online since
October 2006
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Price
$32.00
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