Paper Title:
Fast Non-Contact Dielectric Characterization for SiC MOS Processing
  Abstract

Non-contact corona-voltage metrology is utilized to characterize as-grown thermal oxide films on 4H SiC substrates. Contact potential difference mapping is coupled with incremental application of corona charge to provide whole-wafer images of process related effects and multiplepoint capacitance-voltage characteristics respectively. Correspondence between wafer VCPD images and process details is suggested along with examples of fast electrical dielectric thickness determination and non-contact C-V characteristic acquisition.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1035-1038
DOI
10.4028/www.scientific.net/MSF.527-529.1035
Citation
A.M. Hoff, E. Oborina, "Fast Non-Contact Dielectric Characterization for SiC MOS Processing", Materials Science Forum, Vols. 527-529, pp. 1035-1038, 2006
Online since
October 2006
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Price
$32.00
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