Fast Non-Contact Dielectric Characterization for SiC MOS Processing |
|
| Journal | Materials Science Forum (Volumes 527 - 529) |
|---|---|
| Volume | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 1035-1038 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.1035 |
| Citation | A.M. Hoff et al., 2006, Materials Science Forum, 527-529, 1035 |
| Online since | October, 2006 |
| Authors | A.M. Hoff, E. Oborina |
| Keywords | Capacitance Equivalent Thickness, Corona, Metrology, Non-Contact, vcpd |
| Abstract | Non-contact corona-voltage metrology is utilized to characterize as-grown thermal oxide films on 4H SiC substrates. Contact potential difference mapping is coupled with incremental application of corona charge to provide whole-wafer images of process related effects and multiplepoint capacitance-voltage characteristics respectively. Correspondence between wafer VCPD images and process details is suggested along with examples of fast electrical dielectric thickness determination and non-contact C-V characteristic acquisition. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
