Paper Title:
High Temperature Reliability of SiC n-MOS Devices up to 630 °C
  Abstract

SiC based field-effect devices are attractive for electronic and sensing applications above 250 °C. At these temperatures the reliability of the insulating dielectric in metal-oxidesemiconductor (MOS) structures becomes an important parameter in terms of long-term device performance. We report on the reliability of n-MOS SiC capacitors following thermal stress cycling in the 330 to 630 °C range. As the primary mode of oxide breakdown under these conditions is believed to be due to electron injection from the substrate, the gate leakage current was measured as a function of temperature. The gate dielectric was grown using dry oxidation with a post oxidation NO passivation anneal. For large area, 1 mm diameter, 6H-SiC capacitors we obtain current densities as low as 5nA/cm2 at 630 °C. In addition, gate leakage measurements from arrays of 300 to 1000 2m diameter devices fabricated on different 1cm2 6H-SiC substrates are presented. These are encouraging results for the long-term reliability of SiC field-effect sensors.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1039-1042
DOI
10.4028/www.scientific.net/MSF.527-529.1039
Citation
R. N. Ghosh, R. Loloee, T. Isaacs-Smith, J. R. Williams, "High Temperature Reliability of SiC n-MOS Devices up to 630 °C", Materials Science Forum, Vols. 527-529, pp. 1039-1042, 2006
Online since
October 2006
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