Paper Title:
High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1º) Off-Angle
  Abstract

SiC power MOSFETs are expected to be normally-off type fast switching devices. The on-resistance of SiC power MOSFETs is much higher than the value predicted from the physical properties of SiC. This is caused by the low channel mobility due to high interface state density (Dit). We have already reported that 4H-SiC MOSFETs on the C(0001 _ ) face had higher inversion-channel mobility. However, there is the SiO2/SiC interface roughness problem in SiC MOSFETs. There are many steps at the SiO2/SiC interface because a high off-angle is necessary for SiC epitaxial growth. These steps might make SiO2/SiC interfaces rough, which leads to reduction of channel mobility. In this work, we have investigated the effect of the SiO2/SiC interface roughness caused by the off-angle on the inversion channel mobility of 4H-SiC MOSFETs fabricated on the C(0001 _ ) face. The inversion-channel mobility of MOSFETs fabricated on the 4H-SiC C(0001 _ ) face substrate with the vicinal off-angle(0.8°) is higher than that of MOSFETs fabricated on the 4H-SiC C(0001 _ ) face substrate with the 8° off-angle. Reduction of the off-angle is very useful for improvement of channel mobility. A C(0001 _ ) epitaxial substrate with the vicinal off-angle would be suitable for SiC DMOSFETs.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1043-1046
DOI
10.4028/www.scientific.net/MSF.527-529.1043
Citation
K. Fukuda, M. Kato, S. Harada, K. Kojima, "High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1º) Off-Angle", Materials Science Forum, Vols. 527-529, pp. 1043-1046, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant K. Agarwal, Scott Allen, John W. Palmour
Chapter IV: SiC Devices and Circuits
Abstract:Alkali (Rb, Cs) and alkaline earth elements (Sr, Ba) provide SiO2/SiC interface conditions suitable for obtaining high...
749
Authors: Kensaku Yamamoto, Sauvik Chowdhury, T. Paul Chow
Chapter IV: SiC Devices and Circuits
Abstract:NO annealed Lateral (11-20) MOSFETs were fabricated and mobility limiting mechanisms were investigated by MOS-gated Hall measurements,...
713