Paper Title:
Process Optimisation for <11-20> 4H-SiC MOSFET Applications
  Abstract

We report on 4H-SiC MOSFET devices implemented on p-type <11-20>-oriented epitaxial layers, using a two-step procedure for gate oxide formation. First is a thin, dry, thermal SiO2 layer grown at 1050°C for 1 hour. Next, is a thick (50 nm) layer of complementary oxide deposited by PECVD using TEOS as gas precursor. With respect to the standard thermal oxidation process, this results in much improvement of the field effect mobility. For the best samples, we find a peak value in the range of 330 cm2/Vs while, on the full wafer, an average mobility of about 160 cm2/Vs is found. Up to now, this is one of the best results ever reported for 4H-SiC MOSFETs.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1051-1054
DOI
10.4028/www.scientific.net/MSF.527-529.1051
Citation
C. Blanc, D. Tournier, P. Godignon, D.J. Brink, V. Soulière, J. Camassel, "Process Optimisation for <11-20> 4H-SiC MOSFET Applications", Materials Science Forum, Vols. 527-529, pp. 1051-1054, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Beom Seok Kim, Cheol Seong Hwang, Hyeong Joon Kim
Abstract:Ru thin films were grown by metalorganic chemical vapor deposition (MOCVD) on TiN and TEOS oxide substrates at 300oC using...
41
Authors: Hyu Suk Kim, Hyug Jong Kim, Hyung Su Kim, Young Kyu Jeong, Suk Hwan Kim, Sang Woo Lee, Bong Kyo Jeong, Hyuoung Ho Lee, Byung Ho Choi
Abstract:An investigation is reported by coating BaMgAl10O17:Eu2+ phosphor by silicon oxide using catalyzed atomic layer deposition. Nanoscaled SiO2...
375
Authors: Hidenori Koketsu, Tomoaki Hatayama, Kento Amishima, Hiroshi Yano, Takashi Fuyuki
Abstract:The sloped sidewall angle in 4H-SiC mesa structure could be controlled by a thermal etching at 900oC in chlorine (Cl2) based ambience. 4H-SiC...
485
Authors: Mu Chun Wang, Hsin Chia Yang
The Internet of Things
Abstract:An adequate measurement metrology to nondestructively verify the integrity of dielectric gap-fill in a deep trench (DT) capacitor of...
2385
Authors: Y.X. Cui, B. Shen, F.H. Sun, Z.M. Zhang
Chapter 10: Thin Films
Abstract:Si doped CVD diamond films are prepared on Si substrate by means of hot filament chemical vapor deposition (HFCVD) through adding...
1013