Paper Title:
Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2
  Abstract

In this work we present a comparison between the field-effect (FE) and conductivity (inv) mobilities calculated from ID-VG measurements on a 4H-SiC MOSFET. A compact device model is used to determine inv. The conductivity mobility is found to be larger than FE near room temperature, but less than FE at 500K. These results are due to a reduction in charge trapping at higher temperatures. In strong inversion, inv decreases markedly with increasing temperature. Modeling indicates that surface phonon scattering dominates in this regime.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1055-1058
DOI
10.4028/www.scientific.net/MSF.527-529.1055
Citation
G. Pennington, S. Potbhare, N. Goldsman, D. B. Habersat, A. J. Lelis, "Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2", Materials Science Forum, Vols. 527-529, pp. 1055-1058, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kwan Ho Park, Il Ho Kim
Abstract:Co4-xFexSb12-ySny skutterudites were synthesized by mechanical alloying and hot pressing, and...
65
Authors: Stanislav Stříteský, Jozef Krajčovič, Martin Vala, Martin Weiter
Chapter 4: Materials and Technologies for Organic Electronics
Abstract:Organic semiconductors are suitable for application in biosensors and sensors based on transistors. The influence of soluble group...
189
Authors: Aleksey I. Mikhaylov, S.A. Reshanov, Adolf Schöner, Alexey V. Afanasyev, Victor V. Luchinin, Lars Knoll, Renato A. Minamisawa, Giovanni Alfieri, Holger Bartolf
3.2 MOS Processing, SiC-SiO2 Interfaces and other Dielectrics
Abstract:High channel mobility 4H-SiC MOSFETs have been demonstrated by phosphorus and arsenic implantation prior to thermal oxidation in...
651