Paper Title:
Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs
  Abstract

The effects of gamma radiation on field effect mobility and threshold voltage have been studied for lateral n-channel 4H-SiC MOSFETs passivated with nitric oxide. MOS capacitors (n and p) and n-channel lateral MOSFETs were irradiated unbiased (floating contacts) for a total gamma dose of 6.8Mrad (Si). The MOS capacitors were used to study the radiation-induced interface traps and fixed oxide charge that affect the performance of the MOSFETs. Radiationinduced interface traps were observed near the SiC valence band edge and just above mid-gap, and field effect channel mobility was reduced by 18-20% following irradiation. Even so, 4HMOSFETs appear to be more radiation tolerant than Si devices.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1063-1066
DOI
10.4028/www.scientific.net/MSF.527-529.1063
Citation
A. C. Ahyi, S.R. Wang, J. R. Williams, "Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs", Materials Science Forum, Vols. 527-529, pp. 1063-1066, 2006
Online since
October 2006
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