Paper Title:
High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC
  Abstract

Al2O3 has been grown by Atomic Layer Chemical Vapour Deposition (ALCVD) on ntype 4H-SiC using O3 as an oxidant. After post-deposition, annealing at high temperature (1000°C) in Argon atmosphere for different time periods (1h, 2h, 3h) was performed. Bulk and interface properties of the as-grown as well as the annealed films were studied by electrical measurements (CV, IV, DLTS) and Secondary Ion Mass Spectrometry (SIMS) measurements. The electrical measurements show a decreasing shift of the flatband voltage indicating a diminution of the negative oxide charges with increasing annealing time. After annealing at 1000°C for 3h, the flatband voltage shift has decreased to 6V. The SIMS measurements indicate a double interface with a SiOx (x ≤ 2) interlayer in the as-grown samples while only one interface is observed after annealing, leading to improved electrical behavior of the Metal-Oxide-Semiconductor devices.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1067-1070
DOI
10.4028/www.scientific.net/MSF.527-529.1067
Citation
M. Avice, U. Grossner, O. Nilsen, J. S. Christensen, H. Fjellvåg, B. G. Svensson, "High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 1067-1070, 2006
Online since
October 2006
Keywords
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
905
Authors: A. Trinchi, W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S.J. Ippolito, K. Kalantar-Zadeh, G. Sberveglieri
Abstract:The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive...
123
Authors: Keiko Fujihira, Yoichiro Tarui, Kenichi Ohtsuka, Masayuki Imaizumi, Tetsuya Takami
Abstract:The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found...
697
Authors: Akimasa Kinoshita, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated....
643
Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto
Abstract:Deposited SiN/SiO2 stack gate structures have been investigated to improve the 4H-SiC MOS interface quality. Capacitance-voltage...
679