Paper Title:
Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O
  Abstract

The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC were examined using metal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC and Pt/Al2O3(10nm)/La2O3(5nm)/4H-SiC. For the Pt/La2O3(18nm)/4H-SiC structure, even though the leakage current density was slightly reduced after the rapid thermal annealing at 500 oC, accumulation capacitance was gradually increased with increasing bias voltage due to a high leakage current. On the other hand, since the leakage current in the accumulation regime was decreased for the Pt/Al2O3/La2O3/4H-SiC MIS structure owing to the capped Al2O3 layer, the capacitance was saturated. But the saturation capacitance was strongly dependent on frequency, indicating a leaky interfacial layer formed between the La2O3 and SiC during the fabrication process of Pt/Al2O3(10nm)/ La2O3(5nm)/ 4H-SiC structure.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1083-1086
DOI
10.4028/www.scientific.net/MSF.527-529.1083
Citation
J. H. Moon, D. I. Eom, S. Y. No, H. K. Song, J. H. Yim, H. J. Na, J. B. Lee, H. J. Kim, "Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O", Materials Science Forum, Vols. 527-529, pp. 1083-1086, 2006
Online since
October 2006
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