Paper Title:
Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics
  Abstract

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the breakdown voltage for both SiC JBDs and SBDs, obtained by using high-k dielectrics. A study regarding the influence of the dielectric permittivity and thickness on the off-state performances of the diodes is included. It is shown that Si3N4 is to be preferred to SiO2 for the dielectric ramp. Termination efficiencies up to 96% are reported.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1087-1090
DOI
10.4028/www.scientific.net/MSF.527-529.1087
Citation
M. Brezeanu, M. Badila, G. Brezeanu, F. Udrea, C. Boianceanu, G. Amaratunga, K. Zekentes, "Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics", Materials Science Forum, Vols. 527-529, pp. 1087-1090, 2006
Online since
October 2006
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Price
$32.00
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