Paper Title:
Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide
  Abstract

A new chemical mechanical polishing process (ACMP) has been developed by the Penn State University Electro-Optics Center for producing damage free surfaces on silicon carbide substrates. This process is applicable to the silicon face of semi-insulating, conductive, 4H, 6H, onaxis and off-axis substrates. The process has been optimized to eliminate polishing induced selectivity and to obtain material removal rates in excess of 150nm/hour. The wafer surfaces and resultant subsurface damage generated by the process were evaluated by white light interferometery, Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and epitaxial layer growth. Residual surface damage induced by the polishing process that propagates into the epitaxial layer has been significantly reduced. Total dislocation densities measured on the ACMP processed wafers are on the order of the densities reported for the best as grown silicon carbide crystals [1]. Characterization of high electron mobility transistors (HEMTs) grown on these substrates indicates that the electrical performance of the substrates met or exceeded current requirements [2].

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1091-1094
DOI
10.4028/www.scientific.net/MSF.527-529.1091
Citation
W.J. Everson, V.D. Heydemann, R. D. Gamble, D. Snyder, G. Goda, M. Skowronski, J.R. Grim, E. Berkman, J. M. Redwing, J.D. Acord, "Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide", Materials Science Forum, Vols. 527-529, pp. 1091-1094, 2006
Online since
October 2006
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Price
$32.00
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