Paper Title:
Characterization of Low Stress, Undoped LPCVD Polycrystalline SiC Films for MEMS Applications
  Abstract

This paper details the characterization of polycrystalline SiC (poly-SiC) thin films deposited by low pressure chemical vapor deposition. Films were deposited on both Si and SiO2- coated Si substrates using dichlorosilane (SiH2Cl2) and acetylene (C2H2) as precursor gases. Low residual tensile stress films were deposited at 900°C at a pressure of 2 Torr using SiH2Cl2 and C2H2 (5% in H2) flow rates of 35 sccm and 180 sccm, respectively. XRD analysis of these films indicated a (111) 3C-SiC orientation regardless of substrate material. Both resistivity (1.3 -cm) and residual stress gradient (17 MPa/μm) were found to be relatively low and decreased as the film thickness increased. Unintentional nitrogen doping is responsible for the low resistivity measurements and its concentration in the films was about 1.86 x 1016 cm-3. Poly-SiC films exhibiting near-zero residual tensile stress, low stress gradient and relatively low resistivity have favorable properties for design and fabrication of MEMS devices.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1103-1106
DOI
10.4028/www.scientific.net/MSF.527-529.1103
Citation
J. Dunning, X. A. Fu, M. Mehregany, C. A. Zorman, "Characterization of Low Stress, Undoped LPCVD Polycrystalline SiC Films for MEMS Applications", Materials Science Forum, Vols. 527-529, pp. 1103-1106, 2006
Online since
October 2006
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Price
$32.00
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