Paper Title:
Energy Efficiency: The Commercial Pull for SiC Devices
  Abstract

As SiC devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption. For RF applications, SiC MESFETs have the ability to be easily linearized via digital pre-distortion to offer a 47% improvement in efficiency. In broadband WiMax applications, SiC MESFETs offer more than double the efficiency versus using GaAs MESFETs. SiC Schottky diodes are allowing up to a 25% reduction in losses in power supplies for computers and servers when used in the power factor correction circuit. For motor control, SiC Schottkys allow up to a 33% reduction in losses, as demonstrated for a 3 HP motor drive. Even higher efficiencies can be obtained when the Schottkys are combined with a SiC switch. A 400 W boost converter has been demonstrated using a SiC MOSFET and Schottky diode, operating at >200° C, with an extremely high efficiency of 98%. These improvements in electrical efficiency can have a significant impact in reducing overall electricity consumption worldwide, impacting virtually every aspect of electrical usage, ranging from information technology to motor control, with potential savings of $35 billion/yr.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1129-1134
DOI
10.4028/www.scientific.net/MSF.527-529.1129
Citation
J. W. Palmour, "Energy Efficiency: The Commercial Pull for SiC Devices", Materials Science Forum, Vols. 527-529, pp. 1129-1134, 2006
Online since
October 2006
Authors
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Price
$35.00
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