Paper Title:
SiC Device Applications: Identifying and Developing Commercial Applications
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1135-1140
DOI
10.4028/www.scientific.net/MSF.527-529.1135
Citation
J.W. Hancock, "SiC Device Applications: Identifying and Developing Commercial Applications", Materials Science Forum, Vols. 527-529, pp. 1135-1140, 2006
Online since
October 2006
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: J. Wu, Leonid Fursin, Yu Zhu Li, Petre Alexandrov, Jian H. Zhao
1109
Authors: Jim Richmond, Sei Hyung Ryu, Sumi Krishnaswami, Anant K. Agarwal, John W. Palmour, Bruce Geil, Dimos Katsis, Charles Scozzie
Abstract:This paper reports on a 400 watt boost converter using a SiC BJT and a SiC MOSFET as the switch and a 6 Amp and a 50 Amp SiC Schottky diode...
1445
Authors: Dominique Tournier, Peter Waind, Phillippe Godignon, L. Coulbeck, José Millan, Roger Bassett
Abstract:Due to the significant achievements in SiC bulk material growth and in SiC device processing technology, this semiconductor has received a...
1163
Authors: Georg Tolstoy, Dimosthenis Peftitsis, Jacek Rabkowski, Hans Peter Nee
Abstract:A 4.1x4.1mm2, 100mΩ 1,2kV lateral channel vertical junction field effect transistor (LCVJFET) built in silicon carbide (SiC) from SiCED, to...
722
Authors: Lin Cheng, Anant K. Agarwal, Michael J. O'Loughlin, Craig Capell, Khiem Lam, Charlotte Jonas, Jim Richmond, Al Burk, John W. Palmour, Aderinto A. Ogunniyi, Heather K. O'Brien, Charles Scozzie
Chapter 10: Device and Application
Abstract:In this work, we report our recently developed 16 kV, 1 cm2, 4H-SiC PiN diode results. The SiC PiN diode was built on a 120 µm,...
895