Paper Title:
Developments in Hybrid Si – SiC Power Modules
  Abstract

This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits justifying the increased SiC diode cost, such as EMI reduction, increased efficiency, reduced magnetic filter volume and reduced cooling requirements at higher allowable switching frequencies is investigated.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1141-1147
DOI
10.4028/www.scientific.net/MSF.527-529.1141
Citation
G. Skibinski, D. Braun, D. Kirschnik, R. Lukaszewski, "Developments in Hybrid Si – SiC Power Modules", Materials Science Forum, Vols. 527-529, pp. 1141-1147, 2006
Online since
October 2006
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Price
$32.00
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