Paper Title:
Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution
  Abstract

We carried out the growth of single crystalline silicon carbide (SiC) from Si-C-X (X= Co, Fe) ternary solutions. These ternary solutions are expected to show large carbon solubility compared with Si solvent (self-flux) by means of CALPHAD (CALculation of PHAse Diagrams) method. We investigated the growth rate and the polytype of the grown crystal from the ternary solutions. Then we found that the growth rate from the ternary solutions is much larger than that from the self-flux. The growth rate from Si-C-Co (Si-C-Fe) system was about 6mm/hr (12mm/hr) while that from the self-flux was only 2mm/hr. The grown crystal from the ternary solutions is classified into 6H that takes over the seed polytype.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
115-118
DOI
10.4028/www.scientific.net/MSF.527-529.115
Citation
N. Yashiro, K. Kusunoki, K. Kamei, M. Hasebe, T. Ujihara, K. Nakajima, "Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution", Materials Science Forum, Vols. 527-529, pp. 115-118, 2006
Online since
October 2006
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Price
$32.00
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