Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution |
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| Journal | Materials Science Forum (Volumes 527 - 529) |
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| Volume | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 115-118 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.115 |
| Citation | Nobuyoshi Yashiro et al., 2006, Materials Science Forum, 527-529, 115 |
| Online since | October, 2006 |
| Authors | Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima |
| Keywords | 6H-SiC, CALPHAD, Carbon Solubility, Solution Growth, Ternary Solutions |
| Abstract | We carried out the growth of single crystalline silicon carbide (SiC) from Si-C-X (X= Co, Fe) ternary solutions. These ternary solutions are expected to show large carbon solubility compared with Si solvent (self-flux) by means of CALPHAD (CALculation of PHAse Diagrams) method. We investigated the growth rate and the polytype of the grown crystal from the ternary solutions. Then we found that the growth rate from the ternary solutions is much larger than that from the self-flux. The growth rate from Si-C-Co (Si-C-Fe) system was about 6mm/hr (12mm/hr) while that from the self-flux was only 2mm/hr. The grown crystal from the ternary solutions is classified into 6H that takes over the seed polytype. |
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