Paper Title:
Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modelling
  Abstract

The electrothermal behavior of 4H-SiC 600 V Schottky diodes operated in forward mode is analyzed through numerical and analytically-based simulations. It is shown that the unexpected occurrence of voltage surges systematically detected in state-of-the-art devices is a thermally-induced effect due to the compound contribution of a) the negative temperature coefficient of the forward current at high voltages and b) the relatively high package-to-ambient thermal resistance. As a main result, it is demonstrated that the proposed approaches are suitable to accurately predict the value of a “critical” current density beyond which voltage surges may arise.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1151-1154
DOI
10.4028/www.scientific.net/MSF.527-529.1151
Citation
A. Irace, V. d'Alessandro, G. Breglio, P. Spirito, A. Bricconi, R. Carta, D. Raffo, L. Merlin, "Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modelling", Materials Science Forum, Vols. 527-529, pp. 1151-1154, 2006
Online since
October 2006
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Price
$32.00
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