Paper Title:
Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers
  Abstract

We theoretically and experimentally compare the performance of a new JBS rectifier structure, the Buried Channel JBS (BC-JBS) rectifier, with that of the Lateral Channel JBS (LC-JBS) rectifier with 1.5kV blocking capability in 4H-SiC. The BC-JBS rectifier employs buried p-type regions to create a vertical JFET region to reduce the surface electric field at Schottky contact during reverse blocking while the LC-JBS rectifier adds a lateral channel together with the vertical JFET region to protect the surface Schottky interface during high-voltage blocking conditions. The LC-JBS rectifier offers low reverse leakage current while the BC-JBS rectifier demonstrates lower specific on-resistance. The optimized LC-JBS rectifiers show low forward drop (<1.8V) with PiN-like reverse characteristics.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1159-1162
DOI
10.4028/www.scientific.net/MSF.527-529.1159
Citation
L. Zhu, T. P. Chow, K. A. Jones, C. Scozzie, A. K. Agarwal, "Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers", Materials Science Forum, Vols. 527-529, pp. 1159-1162, 2006
Online since
October 2006
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$32.00
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