Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers
| Periodical | Materials Science Forum (Volumes 527 - 529) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 1159-1162 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.1159 |
| Citation | Lin Zhu et al., 2006, Materials Science Forum, 527-529, 1159 |
| Online since | October, 2006 |
| Authors | Lin Zhu, T. Paul Chow, Kenneth A. Jones, Charles J. Scozzie, Anant K. Agarwal |
| Keywords | 4H-SiC, Junction Barrier Schottky Diode (JBS), Rectifier, Schottky |
| Price | US$ 28,- |
We theoretically and experimentally compare the performance of a new JBS rectifier structure, the Buried Channel JBS (BC-JBS) rectifier, with that of the Lateral Channel JBS (LC-JBS) rectifier with 1.5kV blocking capability in 4H-SiC. The BC-JBS rectifier employs buried p-type regions to create a vertical JFET region to reduce the surface electric field at Schottky contact during reverse blocking while the LC-JBS rectifier adds a lateral channel together with the vertical JFET region to protect the surface Schottky interface during high-voltage blocking conditions. The LC-JBS rectifier offers low reverse leakage current while the BC-JBS rectifier demonstrates lower specific on-resistance. The optimized LC-JBS rectifiers show low forward drop (<1.8V) with PiN-like reverse characteristics.
